Fig. 2From: Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe TomographyEDX analysis at different positions along the growth axis: close to the GaN buffer (left), zoom on four periods at an intermediate position (middle), and at the top part (right). a Al chemical maps. b Specimen thickness. c N/(Ga+Al) ratio. d Al/(Ga+A) ratio. e Probe sizeBack to article page