Fig. 1From: Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum WellsGeometries used to measure the CPGE current. a and b are used to measure the CPGE current induced by Rashba- and Dresselhaus-type SOC, respectivelyBack to article page