Fig. 2From: Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum WellsCommon photocurrent I 1 under a DC bias of 3 V for a samples A, C and b sample B, D, respectively. The arrows indicate the energy positions of the transition 1H1E, 1L1E, and that related to GaAs bulk materialBack to article page