Fig. 4From: Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum WellsAngular dependence of the normalized CPGE current for sample A–D induced by Rashba- and Dresselhaus-type SOC for the transition of 1H1E, respectively. The squares and circles are experiential results and the solid lines are the fitting results according to Eq. (1)Back to article page