Fig. 5From: Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum WellsReflectance difference spectra of the four samples measured at 77 K. The spectra are shifted vertically for clarity. The arrows indicate the energy positions of 1H1E and 1L1EBack to article page