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Table 1 The fitted parameter A of the normalized Rashba- and Dresselhaus-type CPGE current, the ratio of Rashba and Dresselhaus SOC (RD ratio) and the OA intensity corresponding to the transition of 1H1E for the four samples

From: Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells

  Sample A Sample B Sample C Sample D
Parameter A in I R/I 0 1000 ±77 891 ±60 2756 ±205 2945 ±112
Parameter A in I D/I 0 1274 ±45 1849 ±162 1389 ±50 2554 ±104
RD ratio 0.78 ±0.08 0.48 ±0.08 1.98 ±0.23 1.15 ±0.10
Δ r/r (10 −3) 0.13 ±0.05 0.60 ±0.05 0.75 ±0.05 3.00 ±0.05