Account

Table 1 PV parameters of the c-Si solar cells

From: High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions

Solar cell	V _OC (mV)	J _SC (mA/cm²)	FF	η (%)
A (700 °C, 1 s)	572	40.8	0.869	20.3
A− (no annealing)	421	29.4	0.187	2.3
A+ (over-annealing)	553	21.2	0.279	3.3
B	576	40.4	0.868	20.2^a
B (SARI)	579	40.1	0.867	20.1^b
B (SITP)	578	40.6	0.867	20.3^c

^aMeasured at Fudan University
^bMeasured at Shanghai Advanced Research Institute (SARI)
^cMeasured at Shanghai Institute of Technical Physics (SITP)

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