TY - JOUR AU - Lu, W. AU - Lieber, C. M. PY - 2006 DA - 2006// TI - Semiconductor nanowires JO - J Phys Appl Phys VL - 39 UR - https://doi.org/10.1088/0022-3727/39/21/R01 DO - 10.1088/0022-3727/39/21/R01 ID - Lu2006 ER - TY - JOUR AU - Cui, Y. AU - Zhong, Z. AU - Wang, D. AU - Wang, W. U. AU - Lieber, C. M. PY - 2003 DA - 2003// TI - High performance silicon nanowire field effect transistors JO - Nano Lett VL - 3 UR - https://doi.org/10.1021/nl025875l DO - 10.1021/nl025875l ID - Cui2003 ER - TY - JOUR AU - Zheng, G. AU - Lu, W. AU - Jin, S. AU - Lieber, C. M. PY - 2004 DA - 2004// TI - Synthesis and fabrication of high-performance n-type silicon nanowire transistors JO - Adv Mater VL - 16 UR - https://doi.org/10.1002/adma.200400472 DO - 10.1002/adma.200400472 ID - Zheng2004 ER - TY - JOUR AU - McAlpine, M. C. AU - Ahmad, H. AU - Wang, D. AU - Heath, J. R. PY - 2007 DA - 2007// TI - Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors JO - Nat Mater VL - 6 UR - https://doi.org/10.1038/nmat1891 DO - 10.1038/nmat1891 ID - McAlpine2007 ER - TY - JOUR AU - Tian, B. PY - 2007 DA - 2007// TI - Coaxial silicon nanowires as solar cells and nanoelectronic power sources JO - Nature VL - 449 UR - https://doi.org/10.1038/nature06181 DO - 10.1038/nature06181 ID - Tian2007 ER - TY - JOUR AU - Li, X. PY - 2012 DA - 2012// TI - Metal assisted chemical etching for high aspect ratio nanostructures: a review of characteristics and applications in photovoltaics JO - Curr Opin Solid State Mater Sci VL - 16 UR - https://doi.org/10.1016/j.cossms.2011.11.002 DO - 10.1016/j.cossms.2011.11.002 ID - Li2012 ER - TY - JOUR AU - Boukai, A. I. PY - 2008 DA - 2008// TI - Silicon nanowires as efficient thermoelectric materials JO - Nature VL - 451 UR - https://doi.org/10.1038/nature06458 DO - 10.1038/nature06458 ID - Boukai2008 ER - TY - JOUR AU - Hochbaum, A. I. PY - 2008 DA - 2008// TI - Enhanced thermoelectric performance of rough silicon nanowires JO - Nature VL - 451 UR - https://doi.org/10.1038/nature06381 DO - 10.1038/nature06381 ID - Hochbaum2008 ER - TY - JOUR AU - Peng, K. -. Q. AU - Wang, X. AU - Li, L. AU - Hu, Y. AU - Lee, S. -. T. PY - 2013 DA - 2013// TI - Silicon nanowires for advanced energy conversion and storage JO - Nano Today VL - 8 UR - https://doi.org/10.1016/j.nantod.2012.12.009 DO - 10.1016/j.nantod.2012.12.009 ID - Peng2013 ER - TY - JOUR AU - Chan, C. K. PY - 2008 DA - 2008// TI - High-performance lithium battery anodes using silicon nanowires JO - Nat Nanotechnol VL - 3 UR - https://doi.org/10.1038/nnano.2007.411 DO - 10.1038/nnano.2007.411 ID - Chan2008 ER - TY - JOUR AU - Boarino, L. PY - 2011 DA - 2011// TI - Fabrication of ordered silicon nanopillars and nanowires by self-assembly and metal-assisted etching JO - Phys Status Solidi A VL - 208 UR - https://doi.org/10.1002/pssa.201000182 DO - 10.1002/pssa.201000182 ID - Boarino2011 ER - TY - JOUR AU - Peng, K. PY - 2007 DA - 2007// TI - Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching JO - Appl Phys Lett VL - 90 UR - https://doi.org/10.1063/1.2724897 DO - 10.1063/1.2724897 ID - Peng2007 ER - TY - JOUR AU - Chartier, C. AU - Bastide, S. AU - Lévy-Clément, C. PY - 2008 DA - 2008// TI - Metal-assisted chemical etching of silicon in HF–H2O2 JO - Electrochim Acta VL - 53 UR - https://doi.org/10.1016/j.electacta.2008.03.009 DO - 10.1016/j.electacta.2008.03.009 ID - Chartier2008 ER - TY - JOUR AU - Huang, Z. AU - Geyer, N. AU - Werner, P. AU - Boor, J. AU - Gösele, U. PY - 2011 DA - 2011// TI - Metal-assisted chemical etching of silicon: a review: in memory of Prof. Ulrich Gösele JO - Adv Mater VL - 23 UR - https://doi.org/10.1002/adma.201001784 DO - 10.1002/adma.201001784 ID - Huang2011 ER - TY - JOUR AU - Geyer, N. PY - 2015 DA - 2015// TI - Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching JO - Nanotechnology VL - 26 UR - https://doi.org/10.1088/0957-4484/26/24/245301 DO - 10.1088/0957-4484/26/24/245301 ID - Geyer2015 ER - TY - JOUR AU - Qi, Y. PY - 2014 DA - 2014// TI - Electron transport characteristics of silicon nanowires by metal-assisted chemical etching JO - AIP Adv VL - 4 UR - https://doi.org/10.1063/1.4866578 DO - 10.1063/1.4866578 ID - Qi2014 ER - TY - JOUR AU - Balasundaram, K. PY - 2012 DA - 2012// TI - Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires JO - Nanotechnology VL - 23 UR - https://doi.org/10.1088/0957-4484/23/30/305304 DO - 10.1088/0957-4484/23/30/305304 ID - Balasundaram2012 ER - TY - JOUR AU - Silva, M. M. AU - Vaz, A. R. AU - Moshkalev, S. A. AU - Swart, J. W. PY - 2007 DA - 2007// TI - Electrical characterization of platinum thin films deposited by focused ion beam JO - ECS VL - 9 UR - https://doi.org/10.1149/1.2766894 DO - 10.1149/1.2766894 ID - Silva2007 ER - TY - JOUR AU - Tham, D. AU - Nam, C. -. Y. AU - Fischer, J. E. PY - 2006 DA - 2006// TI - Microstructure and composition of focused-ion-beam-deposited Pt contacts to GaN nanowires JO - Adv Mater VL - 18 UR - https://doi.org/10.1002/adma.200501832 DO - 10.1002/adma.200501832 ID - Tham2006 ER - TY - JOUR AU - Lan, Y. -. W. AU - Chang, W. -. H. AU - Chang, Y. -. C. AU - Chang, C. -. S. AU - Chen, C. -. D. PY - 2015 DA - 2015// TI - Effect of focused ion beam deposition induced contamination on the transport properties of nano devices JO - Nanotechnology VL - 26 UR - https://doi.org/10.1088/0957-4484/26/5/055705 DO - 10.1088/0957-4484/26/5/055705 ID - Lan2015 ER - TY - STD TI - Duan X, Niu C, Sahi V, Chen J, Parce JW, Empedocles S, Goldman JL (2003) High-performance thin-film transistors using semiconductor nanowires and nanoribbons. Nature 425:274–278 ID - ref21 ER - TY - STD TI - Wang D, Chang YL, Wang Q, Cao J, Farmer DB, Gordon RG, Dai H (2004) Surface Chemistry and Electrical Properties of Germanium Nanowires. J Am Chem Soc 126:11602–11611 ID - ref22 ER - TY - JOUR AU - Mohammad, S. N. PY - 2010 DA - 2010// TI - Contact mechanisms and design principles for (Schottky and Ohmic) metal contacts to semiconductor nanowires JO - J Appl Phys VL - 108 UR - https://doi.org/10.1063/1.3446845 DO - 10.1063/1.3446845 ID - Mohammad2010 ER - TY - JOUR AU - Zhang, Z. PY - 2007 DA - 2007// TI - Quantitative analysis of current–voltage characteristics of semiconducting nanowires: decoupling of contact effects JO - Adv Funct Mater VL - 17 UR - https://doi.org/10.1002/adfm.200600475 DO - 10.1002/adfm.200600475 ID - Zhang2007 ER - TY - JOUR AU - Nam, C. Y. AU - Tham, D. AU - Fischer, J. E. PY - 2005 DA - 2005// TI - Disorder effects in focused-ion-beam-deposited Pt contacts on GaN nanowires JO - Nano Lett VL - 5 UR - https://doi.org/10.1021/nl0515697 DO - 10.1021/nl0515697 ID - Nam2005 ER - TY - JOUR AU - Ho, C. Y. PY - 2010 DA - 2010// TI - Contact behavior of focused ion beam deposited Pt on p-type Si nanowires JO - Nanotechnology VL - 21 UR - https://doi.org/10.1088/0957-4484/21/13/134008 DO - 10.1088/0957-4484/21/13/134008 ID - Ho2010 ER -