Fig. 1From: Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative ApproachTEM image of a silicon nanowire fabricated by means of metal-assisted chemical etching with HF:H2O2:EtOH = 30:1:20 etching solution. The original resistivity of silicon was 8–12 mΩ cm. The sample presents a high surface roughness; however, no quantitative considerations on the porosity content can be done, due to the intrinsic limitation of TEM analysis, since the transmission signal is relative to the whole volume of the wire. On the other hand, several crystalline domains are preserved inside the nanowireBack to article page