Fig. 4From: Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative ApproachI–V curves of SiNWs contacted with the FIB/GIS method at different temperature (from 100 to 300 K). Each curve represents two voltamperogrames cycles. In the inset, a SEM image of the measured SiNW taken at 500 V of acceleration voltage. The halo is well visibleBack to article page