Fig. 6
From: Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach
Resistances of 4.0-μm long SiNWs wired with FIB/GIS method compared with a 1.0-m long SiNW wired with the EBL method as a function of the temperature. The resistances are calculated by means of a linear fit in the voltage range of 4.8‒5.0 V. The small difference in resistance observable at higher temperature could be attributed to a discrepancy on the effective lengths. However, at lower temperature, this difference becomes bigger up to one order of magnitude. We believe this finding could be the sign of a greater Schottky barrier in the EBL wired SiNWs