Fig. 2From: Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness a Schematic diagram of the LSP-enhanced ZnO QD/MgO/p-GaN LED device. b The I–V characteristic curve of the devices with and without Ag-NPs, and the inset shows the characterization of ohmic contacts on each partBack to article page