Fig. 1
From: Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer
a Combination fabrication system with pulsed laser etching (PLE) and pulsed laser deposition (PLD) devices. b Irradiation system of electron beam, in which the silicon film is exposed under electron beam with 0.5 nA/nm2 in Tecnai G2 F20 system for crystallization. c Furnace annealing device and laser annealing device. d Formation of Si QDs with the structure of the phase separation between Si and SiO x (with x < 2) or Si y N x (with x < 4 and y > 3)