Fig. 3From: Lasing with Pumping Levels of Si Nanocrystals on Silicon WaferPL spectra on Si-NC samples, in which the intensity evolution of wavelength center near 700 nm occurs with change of furnace annealing time, and the optimum annealing time may be about 20 min for producing more numbers of QDs in various scales whose size distribution is shown in the insetBack to article page