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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer

Fig. 5

Fabrication process of the Si QD structures doped with oxygen and their emission. a TEM image of the amorphous structures on Si film prepared by using PLD method in oxygen environment. b TEM image of the Si QD bonding with oxygen atoms on surface after irradiation of electron beam for 15 min. c TEM image of the Si crystals doped with oxygen after irradiation of electron beam for 30 min, in which the crystallization process is almost finished. d PL spectra measured on the Si-NC structures doped with oxygen after furnace annealing for 5 min, in which it is noted that the emission intensity near 600 nm is enhanced on the sample prepared in dilute oxygen of 0.0001 Pa, and the intensity increases near 700 nm on the sample prepared in concentrated oxygen of 10 Pa. e PL spectra measured on the Si-NC structures prepared in dilute oxygen for forming Si–O–Si bond as shown in the inset, in which the sharper peak near 600 nm is observed after annealing for 20 min, but it disappears after annealing for 30 min. f PL spectra measured on the Si-NC structures prepared in concentrated oxygen for forming Si=O bond after annealing for 20 min, in which the very sharper peak near 700 nm with higher gain (over 130 cm−1) and full width at half maximum of 0.5 nm is measured as shown in the inset

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