Fig. 7
From: Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer
Emission model construction with the four-level system. a Density of states from simulation calculation related to the electronic localized states owing to Si–O–Si or Si=O bonding on Si-NC surface. b Construction of the four-level system with the pumping levels on the Si QDs and the trapping states of the QDs doped with oxygen. c Energy position related to the pumping levels on the Si QDs by the QC curve and the trapping states of the QDs doped with oxygen by the CS effect