Fig. 2From: Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaNSIMS profiles of hydrogen, carbon, oxygen, and silicon incorporations for the a LT-20, b LT-21, and c LT-32 samples. The positions of HT-GaN/LT-GaN and LT-GaN/sapphire interfaces are indicatedBack to article page