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Table 1 Heterostructure configurations for the stanene/graphene bilayers (abbreviated as Sn/G)

From: Structural and electronic properties of two-dimensional stanene and graphene heterostructure

Sn/G

a (Å)

α (°)

θ (°)

Δ (Å)

L Sn

L G

L Sn/G

Mismatch (%)

Strain (%)

E b (meV)

\( 3/\sqrt{31} \)

4.53

9

111.2

0.84

13.68

13.61

13.62

0.07

−0.4

−76

\( 2\sqrt{7}/\sqrt{97} \)

4.55

3.8

111.3

0.82

24.12

24.07

24.07

0.29

−0.2

−77

\( \sqrt{21}/\sqrt{73} \)

4.56

5.1

111.3

0.82

20.89

20.88

20.87

0.48

−0.1

−78

\( \sqrt{7}/5 \)

4.61

19.1

112.2

0.80

12.06

12.22

12.20

1.8

1.1

−72

\( \sqrt{13}/4\sqrt{3} \)

4.68

16.1

112.2

0.80

16.43

16.93

16.89

3.6

2.8

−57

  1. Each configuration is built by combining different supercells in individual layers with a relative rotational angle α between them. L Sn/G is the lattice constant of the relaxed bilayer heterostructure and the corresponding a is the effective lattice constant of stanene in the relaxed heterostructure, while L Sn and L G are the lattice constants for the particular unrelaxed supercells of stanene and graphene, respectively. θ and Δ are the bond angle and buckling height in stanene, respectively. The mismatch, strain, and E b are defined in the text

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