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Table 1 Sample structures determined by growth parameters and HR-XRD

From: Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD

Sample x QW (%) d QW (nm) x QB (%) d QB (nm) \( \overline{\mathrm{x}} \) (%)
A 14.8 2.90 0.0 12.36 2.81
B 17.3 2.48 0.0 9.90 3.47
C 19.5 2.10 3.8 10.65 6.37
D 23.2 2.30 1.2 10.06 5.29
E 26.5 2.62 0.0 9.94 7.32