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Table 1 Sample structures determined by growth parameters and HR-XRD

From: Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD

Sample

x QW (%)

d QW (nm)

x QB (%)

d QB (nm)

\( \overline{\mathrm{x}} \) (%)

A

14.8

2.90

0.0

12.36

2.81

B

17.3

2.48

0.0

9.90

3.47

C

19.5

2.10

3.8

10.65

6.37

D

23.2

2.30

1.2

10.06

5.29

E

26.5

2.62

0.0

9.94

7.32

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