Fig. 2From: The Role of Air Adsorption in Inverted Ultrathin Black Phosphorus Field-Effect Transistors a I-V characteristic without annealing as no gate swept. b I-V characteristic just after annealing as no-gate swept. c Output characteristic for back-gate swept from −40 to 40 V just after annealing. d Output characteristic for back-gate inverted BP FET swept from −40 to 40 V after annealing about 5 hBack to article page