Fig. 3From: Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET(Color online) Capacitance–voltage (C–V) curves at 1 MHz with a gate area of 100 × 100 μm2 a with Hf-Ti-O as gate dielectric and b with HfO2 as gate dielectricBack to article page