Fig. 5From: Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET(Color online) Typical transfer characteristics (I d –V g ) of two ETSOI PMOSFETs with W/L = 3 μm/25 nm (—black square—V ds = −0.05 V, V ds = −0.9 V). a With HfO2 as gate dielectric. b With Hf-Ti-O as gate dielectricBack to article page