Fig. 6From: Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET(Color online) Typical transfer characteristics (I d –V g ) of two ETSOI PMOSFETs with Hf-Ti-O as gate dielectric ((—black square—V ds = −0.05 V, V ds = −0.9 V). a W/L = 0.5 μm/25 nm. b W/L = 3 μm/40 nmBack to article page