Fig. 7From: Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFETTransconductance (g m ) versus gate voltage (V g ) curves of the two ETSOI PMOSFETs. a W/L = 0.5 μm/25 nm. b W/L = 3 μm/40 nmBack to article page