Table 1 Device parameters for ETSOI PMOSFETs with Hf-Ti-O as gate dielectric
Parameters | PMOSFET (W/L = 0.5 μm/25 nm) | PMOSFET (W/L = 3 μm/40 nm) |
|---|---|---|
I on (μA/μm) | 246 | 453 |
I off (A/μm) | 2.2 × 10−9 | 2.9 × 10−9 |
I on/I off | 1.12 × 105 | 1.56 × 105 |
V tsat (V) | −0.28 | −0.22 |
V tlin (V) | −0.35 | −0.27 |
g m (μS/μm) | 522 | 856 |
DIBL (mV/V) | 82 | 59 |
SS (mV/decade) | 70 | 66 |