XPS Depth Profile Analysis of Zn3N2 Thin Films Grown at Different N2/Ar Gas Flow Rates by RF Magnetron Sputtering

Table 2 Average grain size and Hall effect data of all the samples

Sample #	N₂/Ar flow rate ratio	Average grain size (nm)	Carrier concentration (cm⁻³)	Hall mobility (cm²/V s)
1	0.22	14	−1.38 × 10¹⁸	0.1125
2	0.40	13	−1.53 × 10²⁰	0.01034
3	0.60	14	−1.01 × 10²¹	0.3012
4	0.80	16	−2.601 × 10²⁰	0.1028
5	1.0	13	−2.02 × 10²¹	0.0084