Fig. 3
From: Realization of III–V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique
a–c AFM images of GSBT films irradiated with a period of 600 nm for 20, 40, and 80 min developments, respectively. d The corresponding cross-sectional profile of (c). e–g AFM images of GSBT films irradiated with a period of 675 nm for 20-, 40-, and 80-min developments, respectively. h The corresponding cross-sectional profile of (g). i–k AFM images of GSBT films irradiated with a period of 900 nm for 20-, 40-, and 80-min developments, respectively. l The corresponding cross-sectional profile of (k)