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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures

Fig. 1

AFM images showing the initial holes and the hole evolution with different Al0.33Ga0.67As deposition thicknesses. a AFM image of the initial holes as fabricated. A GaAs mound elongated into the [1–10] direction surrounds the holes. The inset shows a single hole-mound with a length of ca. 780 nm and a width of ca. 200 nm. bd AFM images of the initial hole-mounds with 5, 20, and 40 nm Al0.33Ga0.67As deposited. The inset in (d) shows that the hole-mound with elongated in the direction [1–10] is preserved after the Al0.33Ga0.67As deposition. e Morphological study of the hole depth and the hole aspect ratio measured at the half hole depth as a function of the AlGaAs thickness. The inset shows the schematic hole-mound profile

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