Fig. 4From: Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures a–d Room temperature μ-PL spectra for samples with different filling of the hole-mound structures with 10-, 5-, 2-, and 1-nm GaAs layer. All samples were measured with the same integration time (30 s). The inset depicts the calculated QW transition energy versus the QW thicknessBack to article page