Fig. 2From: Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate a, c, e 5 × 2.5 μm2 AFM images for the rib-patterned Si (1 1 10) templates with the top width of 450, 800, and 1100 nm after growth of 150 ML Si0.8Ge0.2 at 600 °C. b, d, f The cross-sectional profiles measured along the corresponding dark guiding lines shown in (a), (c), and (e)Back to article page