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Table 1 The calculated results with FEM for the nine proposed models with different configurations of surface morphology

From: Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate

 

Simulation model serials

#1

#2

#3

#4

#5

#6

#7

#8

#9

V tot (×106 nm3)

6.263

S tot (×106 nm2)

1.061

1.049

1.051

L tot (×106 nm)

0.020

0.027

0.019

E str (×105 eV)

4.016

4.100

4.014

4.013

4.010

4.009

4.016

4.014

4.011

ρ str (eV nm−3)

0.064

0.066

0.064

0.064

0.064

0.064

0.064

0.064

0.064

E surf (×106 eV)

6.707

6.635

6.645

6.645

6.645

6.645

6.645

6.645

6.645

ρ surf (eV nm−2)

6.324

6.327

6.325

6.325

6.325

6.325

6.325

6.325

6.325

E str+ E surf (×106 eV)

7.109

7.045

7.046

7.046

7.046

7.046

7.046

7.046

7.046

E edge (×104 eV)

7.299

9.843

7.047

7.122

7.047

7.047

7.159

7.047

7.047

E tot (×106 eV)

7.182

7.143

7.117

7.117

7.117

7.117

7.118

7.117

7.117

ρ tot (eV nm−3)

1.147

1.141

1.136

1.136

1.136

1.136

1.137

1.136

1.136

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