Fig. 4From: Influence of Doping and Nanostructuration on n-Type Bi2(Te0.8Se0.2)3 Alloys Synthesized by Arc Melting a Temperature dependence of the electrical resistivity of n-Bi2Te2.4Se0.6, showing the characteristic semimetallic behavior in the 2–400 K temperature range. The inset shows thermally excited carrier concentration determined by Hall effect. b Seebeck coefficient vs temperatureBack to article page