Fig. 2From: Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System I–V characteristics of the Pt/HfOx/ZnOx/TiN synapse device and conductance dependence on consecutive depressing or potentiating pulses. a I–V characteristics of the Pt/HfOx/ZnOx/TiN synapse device measured by a modified DC double sweep. b I–V characteristics of the memristor at positive and negative bias voltages. The voltage sweep range is from 0 to 1.4 (–0.6) V then back to 0 V, and the time for a sweep cycle is 1 s. The device conductivity continuously decreases or increases during the positive or negative voltage sweeps. c The curves of voltage and current versus time, which are plotted from the data in (b). d The curves of device conductivity versus pulse numbers. The device conductivity can be decreased or increased by consecutive depressing or potentiating pulsesBack to article page