Fig. 3
From: CMOS-Compatible Fabrication for Photonic Crystal-Based Nanofluidic Structure
Simulation result of PC-based nanofluidic structure, TE polarized, SiO2 thickness dsub 2 μm, grating period Λ 400 nm, channel depth dg 350 nm, Si3N4 thickness d0 450 nm. a Normalized reflection spectrum of PC, peak wavelength value (PWV) at TE00 698 nm, peak wavelength value at TE01 595 nm. b Electrical field enhancement of PC-based nanofluidic structure with PWV at 598 nm