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Table 1 Comparison of the electrical properties of the devices

From: The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

Device

V on (V)

μ (cm2/Vs)

On/off

SS (V/decade)

ZnO-TFT

0

11.3

>106

0.4

HZO-TFT

0.26

9.4

>107

0.3

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