Fig. 2
From: Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity
Si <B> whisker resistance versus temperature for the samples doped with boron concentration N B = 2 × 1018 cm−3 which corresponds to dielectric side of the metal-insulator transition (a) and boron concentration N B = 5 × 1018 cm−3 which corresponds to the metal-insulator transition (b). Curves 1 and 2 corresponds to the samples with and without Ni impurity, respectively