Skip to main content
Account
Fig. 2 | Nanoscale Research Letters

Fig. 2

From: On-Demand Fabrication of Si/SiO2 Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal Oxidation

Fig. 2

Cross-sectional SEM micrographs of PS particles after varying exposure durations. PS spheres with an initial diameter of 483 nm were etched for (a) 0, (b) 25, (c) 50, and (d) 100 s at 16.5 sccm Ar gas flows. The black dashed elliptical ones circling the etched particles assist to define the outlines of these etched spheres. The outlines of these etched particles are bottom-aligned in (e). f A schematic diagram of etching model

Back to article page

Navigation