Fig. 2From: On-Demand Fabrication of Si/SiO2 Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal OxidationCross-sectional SEM micrographs of PS particles after varying exposure durations. PS spheres with an initial diameter of 483 nm were etched for (a) 0, (b) 25, (c) 50, and (d) 100 s at 16.5 sccm Ar gas flows. The black dashed elliptical ones circling the etched particles assist to define the outlines of these etched spheres. The outlines of these etched particles are bottom-aligned in (e). f A schematic diagram of etching modelBack to article page