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Table 1 Various parameters for the fabricated MIS capacitors using S1 ~ S4 as insulators

From: Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

Sample

C ox (μF/cm2)

V FB (V) backward

ΔV FB (mV)

N ot (cm−2)

D it (eV−1cm−2)

VBO (eV)

S1

1.32

0.01

299

2.47 × 1012

9.65 × 1012

3.24

S2

1.23

0.07

135

1.03 × 1012

5.12 × 1012

3.36

S3

1.12

0.34

122

8.47 × 1011

4.29 × 1012

3.46

S4

0.94

0.52

72

4.20 × 1011

2.50 × 1012

3.55

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