Table 1 Various parameters for the fabricated MIS capacitors using S1 ~ S4 as insulators
From: Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition
Sample | C ox (μF/cm2) | V FB (V) backward | ΔV FB (mV) | N ot (cm−2) | D it (eV−1cm−2) | VBO (eV) |
---|---|---|---|---|---|---|
S1 | 1.32 | 0.01 | 299 | 2.47 × 1012 | 9.65 × 1012 | 3.24 |
S2 | 1.23 | 0.07 | 135 | 1.03 × 1012 | 5.12 × 1012 | 3.36 |
S3 | 1.12 | 0.34 | 122 | 8.47 × 1011 | 4.29 × 1012 | 3.46 |
S4 | 0.94 | 0.52 | 72 | 4.20 × 1011 | 2.50 × 1012 | 3.55 |