Fig. 2From: Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x /Hf Stack a Fabrication process flow for Pt/Ta2O5/HfO2-x /Hf stack. b Schematic of device layout and the electrical measurement configuration. c Typical FESEM cross sectional images of the Ta2O5(28 nm)/HfO2-x (oxidizing 1600 s)/Hf stack, along with its XPS data of each oxide layer (stoichiometric Ta2O5 and anoxic HfO2)Back to article page