Fig. 3From: Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x /Hf StackThe semi-logarithmic I-V curves of a Device01-03 (different oxidizing duration), b Device02 (violet curve) and Device00 (green curve), and c Device28 with Pt/Ta2O5/HfO2-x /Hf structureBack to article page