Fig. 8
From: Optimization of the Surface Structure on Black Silicon for Surface Passivation
Cross-sectional SEM images of samples etched for 5 and 10 min, respectively, under the conditions of indoor lighting illumination and bulb illumination. Samples were etched by solution B and without any post-etch treatment after Ag+ removal. a Sample etched for 5 min under indoor lighting. b Sample etched for 5 min under bulb illumination. c Sample etched for 10 min under indoor lighting