Fig. 4From: Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress a Transfer and b output characteristics of a typical Ge QW pMOSFET on SOI with and without a −250 MPa uniaxial stress, the latter shows the drive current enhancement. c Devices under −250 MPa external uniaxial strain is observed to enhance the peak intrinsic transconductance by 24% over the Ge QW transistor without uniaxial strainBack to article page