Fig. 5From: Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress R total as a function of L G for the Ge QW transistors with and without external uniaxial compressive strain at V GS−V TH of −1.5 V and V DS of −0.1 V. The uniaxially strained pMOSFETs exhibit a smaller ΔR total/ΔL G slope, indicating higher channel μ eff compared to the devices without uniaxial compressive strainBack to article page