Fig. 6

μ _eff versus Q _inv for Ge QW pMOSFETs on SOI with and without a −250 MPa uniaxial stress. Ge pMOSFETs on SOI demonstrate a 104% μ _eff improvement over relaxed Ge control device at the Q _inv of 2 × 10¹² cm⁻². The μ _eff of the devices under −0.18% uniaxial strain along [110] channel direction is further improved by 24%. Ge QW pMOSFETs on SOI with uniaxial compressive strain obtain a peak μ _eff of 897 cm²/V s. Eighteen times higher μ _eff over Si control devices is achieved in uniaxially strained Ge QW pMOSFETs at low Q _inv