Fig. 2
From: Diameter Tuning of \( \beta \)-Ga2O3 Nanowires Using Chemical Vapor Deposition Technique
FESEM images of Ga2O3 nanowires grown at source to substrate distances of a, b 2 cm, c, d 4 cm, and e, f 6 cm where nanowire diameter decrease with increase in the separation distance on the basis of boundary layer thickness and reactant vapor species in CVD process. Circles in insets of image (b) and (d) show the tip and root of nanowire indicating root growth of Ga2O3 nanowires