Fig. 7

Growth schematic for diameter tuning of Ga₂O₃ nanowires at various growth conditions in CVD system. Root growths of Ga₂O₃ nanowires where processes of surface diffusion transport and direct nucleation of species from vapor phase dominate for the root growth have been demonstrated. Diameter tuning of Ga₂O₃ nanowires have been illustrated by metal source to substrate separation distances on the basis of reactant vapor species and boundary layer in CVD process. Effects of gas flow rate on nanowire morphology are shown. Growth temperatures and catalyst nanoparticle size are demonstrated where temperature-dependent vapor pressure and adatom mobility play crucial role to control the nanowire diameter