Fig. 2From: Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dotsTemperature spectra of conductance for sample type 2 measured at the applied bias voltage of –0.5 V and various frequencies of the test signal 1 100 kHz, 2 50 kHz, 3 10 kHz, and 4 5 kHz. The inset shows the structure of samplesBack to article page