Fig. 3From: Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dotsTemperature spectra of conductance for sample type 3 measured at the applied bias voltage of –0.5 V and various frequencies of the test signal 1 1000 kHz, 2 500 kHz, 3 100 kHz, and 4 10 kHz. The inset shows the structure of samplesBack to article page