Fig. 5From: Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor MemoryHigh-resolution Ni 2p3/2 XPS spectra of ALD Ni NPs deposited at 280 °C for 50 deposition cycles. a Before Ar ion etching. b After Ar ion etching. c High-resolution Ni 2p3/2 XPS spectrum of 20-nm ALD Ni film deposited at 280 °C before Ar ion etchingBack to article page