Fig. 7From: Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor MemoryThe programming characteristics of the memory. a Under a 14V gate bias for different programming times, the inset shows the programming characteristics of the control TFT without Ni NPs. b Under different gate biases for a constant programming time of 5 ms. During all programming operations, the source/drain electrodes were groundedBack to article page